A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2.

Calixto Rodriguez, María Estela y Martínez Valencia, Horacio y Peña Méndez, Yolanda y Flores Cedillo, Osvaldo y Esparza Ponce, Hilda Esperanza y Sánchez Juárez, Arón y Campos Alvarez, José y Reyes Romero, Pedro Guillermo (2010) A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2. Applied surface science, 256 (8). pp. 2428-2433. ISSN 0169-4332

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Resumen

As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV–vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb2S3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the postdeposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (Eg) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb2S3 thin films decreased from 108 to 106 V-cm after plasma treatments.

Tipo de elemento: Article
Palabras claves no controlados: Sb2S3, Thin film, Plasma treatment, Chemical bath deposition.
Materias: CONACYT > Biología y Química
Divisiones: Ciencias Químicas
Usuario depositante: Doctora Yolanda Peña
Creadores:
CreadorEmailORCID
Calixto Rodriguez, María EstelaNO ESPECIFICADONO ESPECIFICADO
Martínez Valencia, HoracioNO ESPECIFICADONO ESPECIFICADO
Peña Méndez, Yolandayolanda.penamn@uanl.edu.mxNO ESPECIFICADO
Flores Cedillo, OsvaldoNO ESPECIFICADONO ESPECIFICADO
Esparza Ponce, Hilda EsperanzaNO ESPECIFICADONO ESPECIFICADO
Sánchez Juárez, ArónNO ESPECIFICADONO ESPECIFICADO
Campos Alvarez, JoséNO ESPECIFICADONO ESPECIFICADO
Reyes Romero, Pedro GuillermoNO ESPECIFICADONO ESPECIFICADO
Fecha del depósito: 19 Sep 2018 14:58
Última modificación: 17 Oct 2018 16:01
URI: http://eprints.uanl.mx/id/eprint/13611

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