AC plasma induced modifications in Sb2S3thin films

Calixto Rodriguez, María Estela y Castillo, F y Martínez, H y Peña Méndez, Yolanda y Sanchez Juarez, A (2010) AC plasma induced modifications in Sb2S3thin films. Journal of Physics: Conference Series, 207. 012019. ISSN 1742-6596

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Resumen

Sb2S3 thin films, deposited by the chemical bath deposition method, were treated with N2 plasma at 3.0 Torr during several minutes. The as-prepared Sb2S3 thin films and films treated with N2 plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb2S3 thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10 to 10 ( cm) due to the annealing effect.

Tipo de elemento: Article
Divisiones: Ciencias Químicas
Usuario depositante: Lic. Josimar Pulido
Creadores:
CreadorEmailORCID
Calixto Rodriguez, María EstelaNO ESPECIFICADONO ESPECIFICADO
Castillo, FNO ESPECIFICADONO ESPECIFICADO
Martínez, HNO ESPECIFICADONO ESPECIFICADO
Peña Méndez, Yolandayolanda.penamn@uanl.edu.mxNO ESPECIFICADO
Sanchez Juarez, ANO ESPECIFICADONO ESPECIFICADO
Fecha del depósito: 29 Abr 2019 18:44
Última modificación: 26 Jul 2019 15:08
URI: http://eprints.uanl.mx/id/eprint/15084

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