Thin films of AgIn5(S/Se)8 prepared in a two stage process.

Messina, Sarah y Rodríguez Lazcano, Yamilet y Campos, J. y Peña Méndez, Yolanda y Barrios Salgado., Enue (2016) Thin films of AgIn5(S/Se)8 prepared in a two stage process. Materials in Electronics, 27 (10). ISSN 0957-4522

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Resumen

AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8-xSex alloy was achievable through the post-deposition treatment at 350 and 400 C. X-ray diffraction and energy dispersive X-ray analyses were performed on the samples. The direct optical band gap value Eg for the films was found to be as the order of 1.75 eV at room temperature. The photo-response measurements exhibited that AgIn5(S/Se)8 thin films are photoconductive and p-type electrical conductivity of 6.6 9 10-6 (X cm)-1 and thermoelectric power of +18 lV/K.

Tipo de elemento: Article
Materias: CONACYT > Biología y Química
Divisiones: Ciencias Químicas
Usuario depositante: Doctora Yolanda Peña
Creadores:
CreadorEmailORCID
Messina, SarahNO ESPECIFICADONO ESPECIFICADO
Rodríguez Lazcano, YamiletNO ESPECIFICADONO ESPECIFICADO
Campos, J.NO ESPECIFICADONO ESPECIFICADO
Peña Méndez, Yolandayolanda.penamn@uanl.edu.mxNO ESPECIFICADO
Barrios Salgado., EnueNO ESPECIFICADONO ESPECIFICADO
Fecha del depósito: 20 Sep 2018 15:15
Última modificación: 01 Mayo 2020 15:52
URI: http://eprints.uanl.mx/id/eprint/13620

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